TSK探针台AP3000/AP3000e


晶圆探针机AP3000/AP3000e(以下简称探针)的设计特点如下。


  • 应用于大直径晶圆(300 mm)

  • 自动操作系统

  • 清洁环境

  • 高精度探测

  • 高通量

  • 低振动

  • 可靠性高ITV精细对准

  • 高刚度级多位点探测



 适用的wafers


 (1) Wafer size: 300 200 mm  (2) Thickness: 300 to 1000 µm  (3) Thickness variation: ±50 µm max. 


 Applicable chip and size: 0.2 to 100 mm (0.1 µm setting)  Not to exceed 1,000,000 chips 


 Index time: 160 ms (Standard speed)  Chip size 10 mm  Z axis operation including 0.5 mm up and  down is 208 ms  4.4 Overall precision: ±0.8 µm AP3000 ±1.5 µm AP3000e) 


ACCT standard conditions  (Use the die in the first lot at wafer position  as reference, from thereafter the variation is  ±0.8µm / ±1.5 µm.)  Operating environment temperature change  is ±1 °C  Using ACCT standard jigs 


 Probing direction: X axis direction probing  (Can used for Y axis direction probing)  


Chuck, Z control  (1) Control resolution: 0.01 µm  (2) Overdrive: −300 to 500 µm  


Power Supply  (1) Input power supply: 200/220/230/240 V AC  (2) Power consumption: 2.4 kVA max.