TSK探针台AP3000/AP3000e
晶圆探针机AP3000/AP3000e(以下简称探针)的设计特点如下。
应用于大直径晶圆(300 mm)
自动操作系统
清洁环境
高精度探测
高通量
低振动
可靠性高ITV精细对准
高刚度级多位点探测
适用的wafers (1) Wafer size: 300 、200 mm (2) Thickness: 300 to 1000 µm (3) Thickness variation: ±50 µm max. Applicable chip and size: 0.2 to 100 mm (0.1 µm setting) Not to exceed 1,000,000 chips Index time: 160 ms (Standard speed) Chip size 10 mm Z axis operation including 0.5 mm up and down is 208 ms 4.4 Overall precision: ±0.8 µm (AP3000) ±1.5 µm (AP3000e) ACCT standard conditions (Use the die in the first lot at wafer position as reference, from thereafter the variation is ±0.8µm / ±1.5 µm.) Operating environment temperature change is ±1 °C Using ACCT standard jigs Probing direction: X axis direction probing (Can used for Y axis direction probing) Chuck, Z control (1) Control resolution: 0.01 µm (2) Overdrive: −300 to 500 µm Power Supply (1) Input power supply: 200/220/230/240 V AC (2) Power consumption: 2.4 kVA max. |